An n-type GaAs semiconductor is doped with N d = 10 60 m -3 . The minority

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An n-type GaAs semiconductor is doped with N _d = 10 ⁶⁰m ^-3. The minority carrier lifetime is T _po = 2 × 10 ^-7 ₈.

Calculate the steady-state increase in conductivity and the steady-state excess carrier recombination rate if a uniform generation rate g’ = 2 x 10210m—9’s"1 is incident on the semiconductor.

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Physics Principles with Applications

ISBN: 978-0321762429

7th edition

Authors: Douglas C. Giancoli

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Posted Date: May 06, 2019 11:19 PM

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An n-type GaAs semiconductor is doped with N d = 10 60 m -3 . The minority

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Physics Principles with Applications

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