Question: 1 7 . ( Sedra P 1 6 . 2 8 ) Consider a CMOS inverter fabricated in a 6 5 nm CMOS process for

17.(Sedra P16.28) Consider a CMOS inverter fabricated in a 65 nm CMOS process for which
VDD =1 V,Vtn =Vtp =0.35 V, and nCox =5.4P Cox =540 A/V2. In addition, QN and QP have L =65nm and (W/L)n =1.5.
(a) Find Wp that results in VM = VDD/2.
(b) For the matched case in (a), find the values of VOH,VOL,VIH,VIL,NML, and NMH.
(c) For the matched case in (a), find the output resistance of the inverter in each of its two states.

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