Question: ( Sedra P 1 6 . 2 8 ) Consider a CMOS inverter fabricated in a 6 5 nm CMOS process for which VDD =

(Sedra P16.28) Consider a CMOS inverter fabricated in a 65 nm CMOS process for which
VDD =1 V, Vtn =Vtp =0.35 V, and nCox =5.4, P Cox =540 A/V2. In addition, QN and
QP have L =65nm and (W/L)n =1.5.
(a) Find Wp that results in VM = VDD/2.
(b) For the matched case in (a), find the values of VOH , VOL, VIH , VIL, N ML, and N MH .
(c) For the matched case in (a), find the output resistance of the inverter in each of its two
states.

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