1. A Si step junction under equilibrium at 300 K has the following doping characteristics: NA...

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1. A Si step junction under equilibrium at 300 K has the following doping characteristics: NA = 5x10¹5 cm-³ ND 1 x 10¹5 cm-3 ND= 3 x10¹5 cm-³ NA = 0 Calculate: (a) The contact potential (also called built-in voltage). (b) The depletion layer width at the p-side and n-sides, and the total depletion layer width. (c) The electric field at the metallurgical junction. (d) The potential at the metallurgical junction. (e) Draw the band diagram under equilibrium. (f) Make sketches of the charge density, electric field and electrostatic potential as a function of position that are roughly to scale. 1. A Si step junction under equilibrium at 300 K has the following doping characteristics: NA = 5x10¹5 cm-³ ND 1 x 10¹5 cm-3 ND= 3 x10¹5 cm-³ NA = 0 Calculate: (a) The contact potential (also called built-in voltage). (b) The depletion layer width at the p-side and n-sides, and the total depletion layer width. (c) The electric field at the metallurgical junction. (d) The potential at the metallurgical junction. (e) Draw the band diagram under equilibrium. (f) Make sketches of the charge density, electric field and electrostatic potential as a function of position that are roughly to scale.