1. If the diffusion coefficient for minority carrier holes in the n-region of a pon diode...

  

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1. If the diffusion coefficient for minority carrier holes in the n-region of a pon diode is increased by a factor of 16 then the current in the diode a) Does not change because the current is dominated by electrons injected into the p-region b) Increases by a factor of 8 c) Increases by a factor of 4 d) Decreases by a factor of 8 e) Cannot be determined (5 pts) 2. Determine the volume density of germanium atoms in a germanium semiconductor. Germanium is in the same group as silicon. The lattice constant of germanium is 5.65 angstroms. a) 1013/cm b) 4.44x1022/cm c) 5.0x1022/cm d) 2.5x1022/cm (5 pts) 3. In a forward biased rectifying metal to p-type semiconductor contact, the dominant current flow is a) holes flowing from the semiconductor to the metal b) holes flowing from the metal to the semiconductor c) recombination of electron-hole-pairs in the depletion region in the semiconductor d) electrons flowing from the semiconductor to the metal (5 pts) 4. From the plot of 1/C, where C, is the junction capacitance of an n+p abrupt junction, one a) N b) Na can extract d) Both (a) and (c) e) Both (b) and (c) c) Vbi f) Na Na, and V 1. If the diffusion coefficient for minority carrier holes in the n-region of a pon diode is increased by a factor of 16 then the current in the diode a) Does not change because the current is dominated by electrons injected into the p-region b) Increases by a factor of 8 c) Increases by a factor of 4 d) Decreases by a factor of 8 e) Cannot be determined (5 pts) 2. Determine the volume density of germanium atoms in a germanium semiconductor. Germanium is in the same group as silicon. The lattice constant of germanium is 5.65 angstroms. a) 1013/cm b) 4.44x1022/cm c) 5.0x1022/cm d) 2.5x1022/cm (5 pts) 3. In a forward biased rectifying metal to p-type semiconductor contact, the dominant current flow is a) holes flowing from the semiconductor to the metal b) holes flowing from the metal to the semiconductor c) recombination of electron-hole-pairs in the depletion region in the semiconductor d) electrons flowing from the semiconductor to the metal (5 pts) 4. From the plot of 1/C, where C, is the junction capacitance of an n+p abrupt junction, one a) N b) Na can extract d) Both (a) and (c) e) Both (b) and (c) c) Vbi f) Na Na, and V

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A greater diffusion current for these carriers would be the outcome of an increase in the diffusion ... View the full answer