Question: (10) How point defects in oxides can be used as dopants and create p-n junctions for next-generation multifunctional smart solid-state devices. Design and provide processing
(10) How point defects in oxides can be used as dopants and create p-n junctions for next-generation multifunctional smart solid-state devices. Design and provide processing details for a specific oxide heterostructure integrated epitaxially with Si(100) to create an oxide p-n junction.
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