Question: ( 2 5 points ) Recombination and Generation Consider silicon at T = 3 0 0 K that is doped with donor impurity atoms to

(25 points) Recombination and Generation
Consider silicon at T =300 K that is doped with donor impurity atoms to a concentration of
Nd =5 x 1015 cm-3. The excess carrier lifetime is 2 x 10-7s.(a) Determine the thermal
equilibrium recombination rate of holes. (b) Excess carriers are generated such that n =p
=1014 cm-3. What is the recombination rate of holes for this condition?

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