Question: (3 pts) Consider the polycrystalline silicon (polySi) device shown below. The is 160 GPa. The shuttle is 10 microns thick and is rigid compared to

(3 pts) Consider the polycrystalline silicon (polySi) device shown below. The is 160 GPa. The shuttle is 10 microns thick and is rigid compared to the thin is 50 microns in both width and length. The beams on each side of the shutt long, 3 microns wide, and 2 microns thick. The polysilicon beams and mass ohmic losses may be neglected. Beneath the shuttle there is a conductive el blue that is 50 microns wide by 40 microns long. The gap between the shutt is 1 micron. You may neglect fringe field capacitance. What is the voltage tt between the shuttle and electrode to achieve pull-in? At what gap between electrode does pull in occur? Lo um . Capacitrwe Electrode A (] N\\ Top Down View

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