7. (d) (10) Plot the log of the phosphorus spreading distance, ddiff, vs temperature in Kelvin, i.e. log10ddiff versus T(K). Use the micrometer, as the unit of ddiff

7. Diffusion of impurity atoms in a host crystal is characterized by the diffusion constant T)Do ex where Es is the activation energy of diffusion, k the Boltzmann constant and T the absolute temperature T(kelvin) T(Celsius)+273.15. In time t, the impurity concentration front will travel a distance Co 0 Co/e The impurity concentration profile in a semiconductor host crystal, i.e. the dopant concentration vs distance from the gas/semiconductor interface is shown in the figure. The diffusion parameters of phosphorus atoms in Si are: Do = 10.5x104 mas: activation energy E,- 3.69 eV, diffusion time t 1.00 hour. 7. Diffusion of impurity atoms in a host crystal is characterized by the diffusion constant T)Do ex where Es is the activation energy of diffusion, k the Boltzmann constant and T the absolute temperature T(kelvin) T(Celsius)+273.15. In time t, the impurity concentration front will travel a distance Co 0 Co/e The impurity concentration profile in a semiconductor host crystal, i.e. the dopant concentration vs distance from the gas/semiconductor interface is shown in the figure. The diffusion parameters of phosphorus atoms in Si are: Do = 10.5x104 mas: activation energy E,- 3.69 eV, diffusion time t 1.00 hour