$($a$)$A$$Si$$p$+-$n $$junction has the following parameters at$300$K:ND$=51016$cm$-3,$A$=$

$10-3$cm$2,$p$=1$s$,$and Dp$=10$cm$2$s$.$

$($i$)$Calculate the total diode current $($I$)$under a forward bias of$0\mathrm{.}5$V$.$

$($ii$)$Calculate the junction capacitance $($Cj$)$under a reverse bias of$10$V$.$