Question: A . A Ta 2 O 5 semiconductor at temperatures greater than 1 2 0 0 C has doubly - charged, oxygen vacancies. Your colleague

A. A Ta2O5 semiconductor at temperatures greater than 1200C has doubly-charged, oxygen vacancies. Your colleague argues strongly that these oxygen ionic defects convert the lattice into a p-type semiconductor is he correct and give your reasoning.
B. Is the semiconductor n-type or p-type, if WO3 is added to Ta2O5 lattice and give your reasoning?

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