A p$-$type semiconductor with $=10133$NA$=1013$cm$3$ occupies a half$-$space, $0$x$0,$ with an interface at $=0$x$=0.$ The interface has a contact with another semiconductor which keeps the minority carrier concentration zero at all times, $(=0)=0$n$($x$=0)=0.$ Inside the semiconductor, there is no electric field and the minority carrier lifetime is $=1010$n$=1010$s$.$

Find the expression for steady$-$state excess minority carrier concentration as a function of x$,()$n$($x$),$ in the semiconductor $0$x$0.$ Write your expression in terms of equilibrium minority carrier concentration $0$n$0,$ diffusion length $$L$,$ generation rate $$G$,$ minority carrier lifetime $$ $($tau$),$ diffusion coefficient $$D and mobility $$ $($mu$).$ Your equation does not have to contain all of these variables.

When entering equation, use $"$n$\_0"$ for $0$n$0,"$mu$"$ for $$ and "tau" for $$$.$