A Si p$-$n junction has sides with boron doping at $1017$ cm $3$ and phosphorus doping at $5\mathrm{.}01017$ cm $3.$ The

junction has a cross$-$sectional area of $104$ cm $2.$ It is in equilibrium at a temperature of $300$ K$.$

For Si$,$ the intrinsic charge carrier density is $1\mathrm{.}51010$ cm $3$ and the dielectric constant is $11\mathrm{.}8.$

What is the contact potential?

What are the depletion region widths on the p$-$side and n$-$side?

What is the peak electric field within the depletion region?

What are the total numbers of uncompensated boron and phosphorus ions within the depletion region?