A silicon p$-$n junction has acceptor concentration Na $=5$x$10\text{'}\text{'}$ cm on p$-$side and donor

concentration Na $=5$x$10\text{'}5$ cm$-3$ on n$-$side. Assume the intrinsic carrier concentration ni $=$ pi $=$

$1$x$1010$ cm$-3.$

$.$ What is the built$-$in contact potential Vo at $300$ K$?$ What is the width W of the

depletion region? What is the width of the depletion region under a reverse bias of $10$ V$?$