Question: A silicon p - n junction has acceptor concentration Na = 5 x 1 0 ^ 1 7 cm ^ - 3 on p -

A silicon p-n junction has acceptor concentration Na=5x10^17 cm^-3 on p-side and donor concentration Nd=5x10^15 cm^-3 on n-side. Assume the intrinsic carrier concentration ni=pi=1x10^10 cm^-3. What is the built-in contact potential V0 at 300K? What is the width W of the depletion region? What is the width of the depletion region under a reverse bias of 10V?

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