2. [3.5] The properties of GAAS are shown in Table 3.1. Calculate the intrinsic concentration and...
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2. [3.5] The properties of GAAS are shown in Table 3.1. Calculate the intrinsic concentration and the intrinsic resistivity at room temperature (take as 300 K). Where is the Fermi level? Assuming the Ne and N, scale as T3/2, what would be the intrinsic concentration at 100°C? If this GaAs crystal is doped with 1017 donors cm3 (such as Te), where is the new Fermi level and what is the resistivity of the sample? The drift motilities in GaAs are shown in Table 3.3. Table 3.1 Selected typical properties of various semiconductors at 300 K. Eg a S- le (nm) (ev) (eV) (cm) (cm) (cm) (cm? V-l s) (cm? v-1 s1) Ge (DI) 0.5650 0.66 (I) 4.13 1.04x1019 6.0x1019 2.3x1013 16 3900 1900 Si (DI) 1.11 (I) 2.8x1019 1.2x1019 0.5431 4.05 1.0x1010 11.8 1450 490 InP (ZB) 0.5868 1.35 (D) 4.50 5.2x107 1.1×1019 3x107 12.6 4600 150 GaAs (ZB) 0.5653 1.42 (D) 4.07 4.7x1017 7x1018 2.1x106 13.0 8500 400 AlAs (ZB) 0.5661 2.17 (I) 3.50 1.5x1019 1.7x1019 10 10.1 200 100 Data combines from a number of sources. I and D represent indirect and direct bandgap. DI, diamond crystal; ZB, zinc blende; a. lattice constant; n, refractive index. (Note that there are variations in the values of certain properties among books e.g. n, for Si, &, for GaAs etc. Most commonly used or recent values have been selected.) TABLE 3.3 Ionized dopant impurities scatter carriers and reduce the drift mobility. The dependence of u, for electrons and u, for holes on the total ionized dopant concentration Dopant concentration (cm-3) 1014 1015 1016 1017 1018 GaAs, µ.(cm? V-'s) GaAs, u (cm? v's=) Si, µe (cm? V- s-) Si, µ, (cm? V-' s) 8500 8000 7000 5000 2400 400 380 310 250 160 1450 1420 1370 1200 730 280 490 485 478 444 328 157 2. [3.5] The properties of GAAS are shown in Table 3.1. Calculate the intrinsic concentration and the intrinsic resistivity at room temperature (take as 300 K). Where is the Fermi level? Assuming the Ne and N, scale as T3/2, what would be the intrinsic concentration at 100°C? If this GaAs crystal is doped with 1017 donors cm3 (such as Te), where is the new Fermi level and what is the resistivity of the sample? The drift motilities in GaAs are shown in Table 3.3. Table 3.1 Selected typical properties of various semiconductors at 300 K. Eg a S- le (nm) (ev) (eV) (cm) (cm) (cm) (cm? V-l s) (cm? v-1 s1) Ge (DI) 0.5650 0.66 (I) 4.13 1.04x1019 6.0x1019 2.3x1013 16 3900 1900 Si (DI) 1.11 (I) 2.8x1019 1.2x1019 0.5431 4.05 1.0x1010 11.8 1450 490 InP (ZB) 0.5868 1.35 (D) 4.50 5.2x107 1.1×1019 3x107 12.6 4600 150 GaAs (ZB) 0.5653 1.42 (D) 4.07 4.7x1017 7x1018 2.1x106 13.0 8500 400 AlAs (ZB) 0.5661 2.17 (I) 3.50 1.5x1019 1.7x1019 10 10.1 200 100 Data combines from a number of sources. I and D represent indirect and direct bandgap. DI, diamond crystal; ZB, zinc blende; a. lattice constant; n, refractive index. (Note that there are variations in the values of certain properties among books e.g. n, for Si, &, for GaAs etc. Most commonly used or recent values have been selected.) TABLE 3.3 Ionized dopant impurities scatter carriers and reduce the drift mobility. The dependence of u, for electrons and u, for holes on the total ionized dopant concentration Dopant concentration (cm-3) 1014 1015 1016 1017 1018 GaAs, µ.(cm? V-'s) GaAs, u (cm? v's=) Si, µe (cm? V- s-) Si, µ, (cm? V-' s) 8500 8000 7000 5000 2400 400 380 310 250 160 1450 1420 1370 1200 730 280 490 485 478 444 328 157
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Probability & Statistics for Engineers & Scientists
ISBN: 978-0130415295
7th Edition
Authors: Ronald E. Walpole, Raymond H. Myers, Sharon L. Myers, Keying
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