Question: An extrinsic p-type semiconductor is made by doping pure Si with Boron, which is a group III element. At -50C the number of holes

An extrinsic p-type semiconductor is made by doping pure Si with Boron,

An extrinsic p-type semiconductor is made by doping pure Si with Boron, which is a group III element. At -50C the number of holes is 1022 per cubic meter. If the acceptor energy state is 0.02 eV above the valance band, calculate the number of dopant atoms. You may assume that the material is in the freeze out region. O 2.8 x 1022 m 3. 9.1 x 1023 m-3. 4.5 x 1023 m-3 1.5 x 1024 m-3.

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