An extrinsic p-type semiconductor is made by doping pure Si with Boron, which is a group...

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An extrinsic p-type semiconductor is made by doping pure Si with Boron, which is a group III element. At -50°C the number of holes is 1022 per cubic meter. If the acceptor energy state is 0.02 eV above the valance band, calculate the number of dopant atoms. You may assume that the material is in the freeze out region. O 2.8 x 1022 m 3. 9.1 x 1023 m-3. 4.5 x 1023 m-3 1.5 x 1024 m-3. An extrinsic p-type semiconductor is made by doping pure Si with Boron, which is a group III element. At -50°C the number of holes is 1022 per cubic meter. If the acceptor energy state is 0.02 eV above the valance band, calculate the number of dopant atoms. You may assume that the material is in the freeze out region. O 2.8 x 1022 m 3. 9.1 x 1023 m-3. 4.5 x 1023 m-3 1.5 x 1024 m-3.

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