An intrinsic semiconductor of band gap 1.25 eV has an electron concentration 10 cm at 300...
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An intrinsic semiconductor of band gap 1.25 eV has an electron concentration 10¹⁰ cm at 300 K. Assume that its band gap is independent of temperature and that the electron concentration depends only exponentially on the temperature. If the electron concentration at 200 K is Y×10 cm ³ (1 An intrinsic semiconductor of band gap 1.25 eV has an electron concentration 10¹⁰ cm at 300 K. Assume that its band gap is independent of temperature and that the electron concentration depends only exponentially on the temperature. If the electron concentration at 200 K is Y×10 cm ³ (1
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