Assume an engineer uses implantation method to introduce Phosphorus ions (P+) into Si substrate. The implantation...

 

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Assume an engineer uses implantation method to introduce Phosphorus ions (P+) into Si substrate. The implantation dose is higher than amorphization dose. The amorphized region is shown in below figure after implantation. To repair the damage, he performed an annealing at 430 degrees for solid phase epitaxy. a) Use schematics to show how solid phase epitaxy process is done by using the figure below. b) If only 430 degrees was used, list 2 problems that we will be facing for damage repair. Si Substrate Amorphized Si Si Substrate Assume an engineer uses implantation method to introduce Phosphorus ions (P+) into Si substrate. The implantation dose is higher than amorphization dose. The amorphized region is shown in below figure after implantation. To repair the damage, he performed an annealing at 430 degrees for solid phase epitaxy. a) Use schematics to show how solid phase epitaxy process is done by using the figure below. b) If only 430 degrees was used, list 2 problems that we will be facing for damage repair. Si Substrate Amorphized Si Si Substrate

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Solution a Initially the Si substrate is implanted wi... View the full answer