Assume that the gate oxide between an n$+$ poly$-$Si gate and the p$-$substrate is $11$ thick and N$=1018$ cm$3.$ Assume flat band voltage to be $-1\mathrm{.}04$ V$.($a$)$ What is the V of this device? $($b$)$ What is the subthreshold swing, S$?($c$)$ What is the maximum leakage current if W $=1$ um$,$ L $=18$ nm$?($Assume las $=100$ W$/$L $($nA$)$ at V$=$ Vt$.)$