Assume three silicon samples at ambient temperature. The n$-$type sample is doped with arsenic

atoms to a concentration of Nd $=5$ x$\_1016$ cm$-3$ with diffusion constant of $28\mathrm{.}49$ cm$/$s$.$ The p$-$type

sample is doped with boron atoms to a concentration of Na $=2$x$1016$ cm$-3$ with diffusion constant

of $10\mathrm{.}36$ cm$/$s$.$ The compensated sample is doped with both the donors and acceptors described

in the n$-$type and p$-$type samples. $($a$)$ Find the equilibrium electron and hole concentrations in

each sample, $($b$)$ determine the majority carrier mobility in each sample, $($c$)$ calculate the

conductivity of each sample, $($d$)$ and determine the electric field required in each sample to

induce a drift current density of J $=120$ A$/$cm$2.$