1. A silicon wafer of (100) orientation, with uniform doping 106 boron/cm' is covered with 0.1...

 

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1. A silicon wafer of (100) orientation, with uniform doping 106 boron/cm' is covered with 0.1 um of silicon dioxide, wafer goes through wet oxidation (Wet O2) at 1100°C for 45 minutes. Calculate the oxide thickness at the end of the process, and thickness of Silicon consumed during oxidation. Draw its cross-sectional diagram showing oxide thickness and Silicon consumed. 1. A silicon wafer of (100) orientation, with uniform doping 106 boron/cm' is covered with 0.1 um of silicon dioxide, wafer goes through wet oxidation (Wet O2) at 1100°C for 45 minutes. Calculate the oxide thickness at the end of the process, and thickness of Silicon consumed during oxidation. Draw its cross-sectional diagram showing oxide thickness and Silicon consumed.