Question: 1. A silicon wafer of (100) orientation, with uniform doping 106 boron/cm' is covered with 0.1 um of silicon dioxide, wafer goes through wet

1. A silicon wafer of (100) orientation, with uniform doping 106 boron/cm' 

1. A silicon wafer of (100) orientation, with uniform doping 106 boron/cm' is covered with 0.1 um of silicon dioxide, wafer goes through wet oxidation (Wet O2) at 1100C for 45 minutes. Calculate the oxide thickness at the end of the process, and thickness of Silicon consumed during oxidation. Draw its cross-sectional diagram showing oxide thickness and Silicon consumed.

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