Question: Consider a longpn junction diode with an acceptor doping, Na, of 1018 cm-3 on the p-side and donor concentration of Nd on the n-side. The

Consider a longpn junction diode with an acceptor doping, Na, of

Consider a longpn junction diode with an acceptor doping, Na, of 1018 cm-3 on the p-side and donor concentration of Nd on the n-side. The diode is forward biased and has a voltage of 0.6 V across it. The diode cross-sectional area is 1 mm2. The minority carrier recombination time, T, depends on the dopant concentration, Ndopant (cm-3), through the following approximate relation 5x10-7 1+2x 10-11 TE dopant a. Suppose that Nd = 1015 cm-3. Then the depletion layer extends essentially into the n-side and we have to consider minority carrier recombination time, th, in this region. Calculate the diffusion and recombination contributions to the total diode current. What is your conclusion? b. Suppose that Nd = Na = 1018 cm-3. Then Wextends equally to both sides and further, te = Th. Calculate the diffusion and recombination contributions to the diode current. What is your conclusion

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