Question: Consider a silicon P- N step junction diode with N d = 10 18 cm -3 and N a = 5 10 15 cm -3

Consider a silicon P- N step junction diode with N_d = 10¹⁸ cm^-3 and N_a = 5 10¹⁵ cm^-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um². If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?

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