Consider an abrupt Si pn' junction that has 10 acceptors cm on the p-side and 10...

 

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Consider an abrupt Si pn' junction that has 10" acceptors cm on the p-side and 10" donors on the n-side. The minority carrier recombination times are r=490 ns for electrons in the p-side and t=2.5 ns for holes in the n-side. The cross-sectional area is 1 mm. Assuming a long diode, calculate the current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I and the incremental resistance (ra) of the diode and why are they different? Consider an abrupt Si pn' junction that has 10" acceptors cm on the p-side and 10" donors on the n-side. The minority carrier recombination times are r=490 ns for electrons in the p-side and t=2.5 ns for holes in the n-side. The cross-sectional area is 1 mm. Assuming a long diode, calculate the current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I and the incremental resistance (ra) of the diode and why are they different?

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To calculate the current through the diode at room temperature T 300 textK when the voltage across i... View the full answer