Question: Consider an ideal pn junction diode with the following parameters n o = 7 0 0 = 0 . 1 1 0 - 6 S

Consider an ideal pn junction diode with the following parameters no=700=0.110-6S,Dn=25cm2s,DD=10cm2s. What must be the ratio of NcNd so that 95% of the current in the depletion region is carried by electrons?
Consider an ideal pn junction diode with the

Step by Step Solution

There are 3 Steps involved in it

1 Expert Approved Answer
Step: 1 Unlock blur-text-image
Question Has Been Solved by an Expert!

Get step-by-step solutions from verified subject matter experts

Step: 2 Unlock
Step: 3 Unlock

Students Have Also Explored These Related Electrical Engineering Questions!

Q:

Sitting on Maggie Brumfield s desk is the latest planned order report ( shown below ) from the company s MRP system. Maggie s job is to determine if there is enough capacity to handle the workload...

Q:

Consider an ideal pn junction diode with the following parameters: n 0 = p 0 = 0 . 1 1 0 6 s \ tau _ { n 0 } = \ tau _ { p 0 } = 0 . 1 \ times 1 0 ^ { - 6 } \ , \ text { s } n 0 = p 0 = 0 . 1 1 0 6 s...

Q:

11. An ideal germanium pn junction diode has the following parameters: N = 4 1015 cm, N = 2 1017 cm, Dp = 48 cm/s, D=90 cm/s, Tpo= Tno = 2 x 106 s, and A= 10 cm. Determine the diode current for (a)...

Q:

Consider an ideal silicon p - n junction diode with the following parameters: = = 0 . 1 \ times 1 0 6 s . = 1 0 cm 2 s 1 , = 2 5 cm 2 s 1 . What must be the ratio of so that 9 5 percent of the...

Q:

Consider an ideal silicon p - n junction diode with the following parameters: p = n = 0 . 1 1 0 - 6 s . D p = 1 0 c m 2 s - 1 , D n = 2 5 c m 2 s - 1 . Wh = t must be the ratio of N A N D so that 9 5...

Q:

An ideal germanium pn junction diode has the following parameters: Na = 4 * 1 0 ^ 1 5

Q:

( 2 0 points ) Problem 8 . 3 0 Consider a GaAs pn junction diode with a cross - sectional area of A = 2 x 1 0 4 cm 2 and doping concentrations of Na = Nd = 7 x 1 0 1 6 cm 3 . The electron and hole...

Q:

Consider a GaAs pn junction diode at T = 3 0 0 K with parameters Nd = 8 x 1 0 1 6 cm - 3 , Na = 2 x 1 0 1 5 cm - 3 , Dn = 2 0 7 cm 2 / s , Dp = 9 . 8 0 cm 2 / s , o = po = no = 5 x 1 0 - 8 s . ( a )...

Q:

Assignment 8 . 3 A silicon pn junction photodiode has the following parameters at T = 3 0 0 K : N d = 2 1 0 1 5 c m - 3 , N a = 1 0 1 6 c m - 3 D p = 1 0 c m 2 s , D n = 2 5 c m 2 s p 0 = 1 0 - 7 s ,...

Q:

1. Use this information to answer Question 1.2i Capacitance-voltage measurements were performed on a one-sided pn junction made of silicon. When the measured data were plotted on a 1/C2V graph, the...

Q:

EC310 - Fall 2021 HW(4):PN Forward biasing Due to 1/Jan/2022 Q1) Consider a P N junction diode with No = 10 cm in the N region, Tp is given to be 1 usec. a) Determine the diffusion length L on the...

Q:

Explain how, in using the mean-per unit method to evaluate results, the auditors use the differences between the audited values and the book values of the individual items in their sample.

Q:

Hosbol Corporation has purchased a system for $1 million. The net income from operating this system is $300,000 per year. Assuming a life of five years and no salvage value, what is the Net Present...

Q:

Chevrolet Creative Agency applies overhead to jobs based on direct professional labor hours. Overhead was estimated to be $248,000, direct professional labor hours were estimated at 31,000, and...

Q:

E15.2 (LO 1) (Recording the Issuance of Common and Preferred Stock) Kathleen Battle Corporation was organized on January 1, 2020. It is authorized to issue 10,000 shares of 8%, $100 par value...