Consider an ideal silicon p$-$n junction diode with the following parameters: ${}_p={}_n=0\mathrm{.}1{10}^{-6}s.D_p=10c{m}^2{s}^{-1},D_n=25c{m}^2{s}^{-1}.$ Wh $=$ t must be the ratio of $\frac{N_A}{N_D}$ so that $95$ percent of the current in the depletion region is carried by electrons?

$\backslash$table$[[$number$,$example$],[1,0\mathrm{.}053],[2,0\mathrm{.}063],[3,0\mathrm{.}973],[4,0\mathrm{.}083],[5,0\mathrm{.}093]]$