Consider an n$-$channel MOSFET on p$-$type substrate. The insulator is SiO$2$ with a relative permittivity of r$=3\mathrm{.}9[$$0=8\mathrm{.}85$ x $10-12$ F$/$m$]$ and thickness of $12$ nm$.$ The electron mobility is $350$ cm$2$ V$$s $,$ the width is $18$ m$,$ and the length is $1\mathrm{.}5$ m$.$ The threshold voltage is $0\mathrm{.}7$ V$.$ a$)$ Find the process transconductance parameter, kn $\text{'}=$ mn Cox, in the units of A$/$V$2.$ b$)$ The ratio of the transistor width and length is called the aspect ratio W$/$L$.$ Find the aspect ratio. c$)$ Find the transconductance parameter, k$.$ Note: the reason they use two different parameters $($k and k$)$ is because when you$$re doing integrated circuit design $($meaning designing thousands of transistors to be fabricated and interconnected on a wafer$),$ the values that make up k$$ are fixed by the wafer fabrication process $($meaning all transistors in the circuit will share the same value of k$).$ The circuit designer can only specify the W and L of each transistor in order to control k$.$