Question: Consider an n-type Si rectangular bar with a length L = 1 L=1 c m cm, width w = 0.5 w=0.5 m m mm and

Consider an n-type Si rectangular bar with a length L = 1 L=1 c m cm, width w = 0.5 w=0.5 m m mm and thickness t = 5.0 t=5.0 m m. The top surface (1 cm 0.5 mm) is then uniformly illuminated by monochromatic light at 1.3 eV with power density of 0.3 0.3 W / c m 2 W/cm 2 . Assume that N d = 1 0 14 N d =10 14 c m 3 cm 3 , n = 1400 n =1400 c m 2 / V s cm 2 /Vs, p = 500 p =500 c m 2 / V s cm 2 /Vs, n i = 1.45 1 0 10 / c m 3 n i =1.4510 10 /cm 3 is much less than N d N d , (quantum efficiency) = 0.8, (absorption coefficient) = 1 1 0 3 / c m 110 3 /cm and n = p = 1 1 0 6 s n = p =110 6 s. Calculate the rate of generation

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