n = N, exp[-CE, E27 5.7 Degenerate semiconductor Consider the general exponential expression for the concentration of electrons in the CB (E. - ) KT and the mass action law, np = n;. What happens when the doping level is such that n and exceeds it? Can you still use the above expressions for n and p? Consider an n-type Si that has been heavily doped and the electron concentratio 100 cm? Where is the Fermi level? Can you use np = n to find the hole concentrati resistivity? How does this compare with a typical metal? What use is such a semicondu The following figures are helpful