Figure A.1 shows the Reflection high energy electron diffraction (RHEED) specular spot intensity recorded during the growth
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Question:
Figure A.1 shows the Reflection high energy electron diffraction (RHEED) specular spot intensity recorded during the growth of a GaAs layer. If the peak values are 7.0 and 35.6 seconds for Peak A and B in Figure A.1, respectively, estimate the growth time required for the 200-nm GaAs layer based on the growth rate in Figure A.1. The average thickness of a GaAs monolayer is 0.28 nm.
Related Book For
Physics for Scientists and Engineers A Strategic Approach with Modern Physics
ISBN: 978-0133942651
4th edition
Authors: Randall D. Knight
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