A silicon n+pn BJT has the following parameters: emitter, base, and collector doping concentrations are 2...

 

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A silicon n+pn BJT has the following parameters: emitter, base, and collector doping concentrations are 2 x 10^18 cm-3, 10^16 cm-3, and 10^15 cm-3. Assume the corresponding lifetimes are 10^-8, 10^-7, and 10^-6 and also De = 1 cm/s, Dn = 10 cm2/s and Dc = 2 cm2/s, and neutral base width is 0.8 mm, the area is 0.04 mm 1) For the device at normal operation with emitter junction forward biased at 0.5V, collector junction reverse biased at - 5V. Calculate the minority concentration at the two edges of the neutral base region. 2) Calculate the current line, lep, and emitter efficiency. 3) Draw the energy band diagrams for the device in equilibrium and at above-bias conditions. Show the built-in potential and bias in each of the junctions in the diagrams. A silicon n+pn BJT has the following parameters: emitter, base, and collector doping concentrations are 2 x 10^18 cm-3, 10^16 cm-3, and 10^15 cm-3. Assume the corresponding lifetimes are 10^-8, 10^-7, and 10^-6 and also De = 1 cm/s, Dn = 10 cm2/s and Dc = 2 cm2/s, and neutral base width is 0.8 mm, the area is 0.04 mm 1) For the device at normal operation with emitter junction forward biased at 0.5V, collector junction reverse biased at - 5V. Calculate the minority concentration at the two edges of the neutral base region. 2) Calculate the current line, lep, and emitter efficiency. 3) Draw the energy band diagrams for the device in equilibrium and at above-bias conditions. Show the built-in potential and bias in each of the junctions in the diagrams.

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