Question: In a Si MOS capacitor with an ( mathrm { SiO } _ { 2 } ) layer thickness of 2 4

In a Si MOS capacitor with an \(\mathrm{SiO}_{2}\) layer thickness of 24 nm , the maximum depletion layer thickness is 100 nm . The ratio of the maximum capacitance to the minimum capacitance of this capacitor is
The correct answer is: 2.38
In a Si MOS capacitor with an \ ( \ mathrm { SiO

Step by Step Solution

There are 3 Steps involved in it

1 Expert Approved Answer
Step: 1 Unlock blur-text-image
Question Has Been Solved by an Expert!

Get step-by-step solutions from verified subject matter experts

Step: 2 Unlock
Step: 3 Unlock

Students Have Also Explored These Related Electrical Engineering Questions!

Q:

Edit: I'm not quite sure what needs to be added since all the comment said was "no." 1. MOS Capacitor on n-type Si. Consider a MOS capacitor built with aluminum as the metal, a 50 nm thick silicon...

Q:

MOS Capacitor on n-type Si. Consider a MOS capacitor built with aluminum as the metal, a 50 nm thick silicon dioxide as the insulator, and n-type Si whose donor concentration is 1015 cm- -3. a)...

Q:

The C-V curve of MOS capacitor is shown below. 1. What is thickness of oxide layer? 2. What is the type of substrate doping? . What is the maximum depletion layer width ? 4. What is the doping...

Q:

2. MOS Capacitor on n-type substrate Consider a MOS capacitor with a p polysilicon gate and n-type silicon substrate. Assume Na = 106 cm for the substrate and let Ev - Ep = 0.2 eV in the p*...

Q:

One application of a MOS capacitor is as a Varactor, a variable capacitance element tunable with voltage. To get a good varactor we want to maximize the ratio of the maximum capacitance to the...

Q:

A CMOS capacitor with n + Poly Si as metal gate has 1 0 0 nm thick oxide ( SiO 2 ) layer, 1 . 5 * 1 0 1 6 / cm 3 substrate carrier density, 8 * 1 0 - 8 C / cm 2 oxide layer charge density, and - 6 *...

Q:

At room temperature for a p - type silicon substrate MOS capacitor with NA = 1 0 1 8 cm - 3 and an oxide thickness of 2 nm with Ko = 3 . 9 : a ) Compute fermi potential F b ) Calculate the maximum...

Q:

P 1 . A MOSCAP is fabricated on a p - type silicon wafer with a doping concentration of 1 0 1 5 c m 3 . Aluminum is used as the gate material and the gate dielectric is silicon dioxide with a...

Q:

1. Consider an aluminum "gate" MOS capacitor fabricated on a uniformly doped p-type substrate covered with a uniform layer of thermally grown silicon dioxide. Suppose that the net acceptor doping...

Q:

Consider an ideal MOS capacitor fabricated on a P - type silicon with a doping of NA = 5 \ times 1 0 1 6 cm - 3 with an oxide thickness of 2 nm and an N + poly - Si gate. ( a ) What is the flat -...

Q:

Ecklund Company purchased land and a building on January 1, 2010. Managements best estimate of the value of the land was $100,000 and of the building $200,000. But management told the accounting...

Q:

The ledger of Chopin Rental Agency on March 31 of the current year includes the following selected accounts before adjusting entries have been prepared. An analysis of the accounts shows the...

Q:

32. What is a performance obligation, and how is it used to determine when revenue should be recognized?

Q:

(Corporate income tax) Barrington Enterprises earned $3.3 million in taxable income (earnings before taxes) during its most recent year of operations. Use the corporate tax rates shown in the popup...