IN MATLAB (Please) [[MATLAB CODE]]

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please emphasize 'how to adjust for: N= (number of iterative guesses) or N=number of iterations.

(A) N after 12 iterations is 9.114 x 10⁹

(B) N after 12 iterations is 9.591 x 10⁹

(C) N after 12 iterations is 9.642 x 10⁹

(D) N after 12 iterations is 9.836 x 10⁹

THE PROBLEM 5.16 REFERRED ABOVE WILL BE POSTED BELOW FOR THE EQUATION(S) MENTIONED

- Thank you.

5.16. The resistivity p of doped silicon is based on the charge q on an electron, the electron density n, and the electron mobility u. The electron density is given in terms of the doping density N and the intrinsic carrier density ni. The electron mobility is described by the temperature T, the reference temperature TO, and the reference mobility po. The equations required to compute the resistivity are given on page 149 in p 5.16. Determine N after 12 iterations, given TO = 300 K, T = 1000 K, PO =1360 cm2 (vs)-1, q = 1.7 x 10-19 C, ni= 6.21 x 109 cm-3, and a desired p = 6.5 x 106 V s cm/C. Employ initial guesses of N = 0 and 2.5 x 1010. Use the false position method. ON after 12 iterations is 9.114 x 109 N after 12 iterations is 9.591 x 109 N after 12 iterations is 9.642 x 109 O Nafter 12 iterations is 9.836 x 109 5.16 The resistivity p of doped silicon is based on the charge q on an electron, the electron density n, and the elec- tron mobility p. The electron density is given in terms of the doping density N and the intrinsic carrier density n. The electron mobility is described by the temperature T, the ref- erence temperature To, and the reference mobility Ho. The equations required to compute the resistivity are 1 P anu where N+N2 and = To Determine N, given to = 300 K, T = 1000 K, Mo= 1360 cm (V8) 5.q=1.7 x 10-1C, n;=6.21 x 109cm?, and a desired p= 6.5 x 106 V s cm/C. Employ initial guesses of N = 0 and 2.5 x 10'0. Use (a) bisection and (b) the false position method. -2.42 1 n= () 5.16. The resistivity p of doped silicon is based on the charge q on an electron, the electron density n, and the electron mobility u. The electron density is given in terms of the doping density N and the intrinsic carrier density ni. The electron mobility is described by the temperature T, the reference temperature TO, and the reference mobility po. The equations required to compute the resistivity are given on page 149 in p 5.16. Determine N after 12 iterations, given TO = 300 K, T = 1000 K, PO =1360 cm2 (vs)-1, q = 1.7 x 10-19 C, ni= 6.21 x 109 cm-3, and a desired p = 6.5 x 106 V s cm/C. Employ initial guesses of N = 0 and 2.5 x 1010. Use the false position method. ON after 12 iterations is 9.114 x 109 N after 12 iterations is 9.591 x 109 N after 12 iterations is 9.642 x 109 O Nafter 12 iterations is 9.836 x 109 5.16 The resistivity p of doped silicon is based on the charge q on an electron, the electron density n, and the elec- tron mobility p. The electron density is given in terms of the doping density N and the intrinsic carrier density n. The electron mobility is described by the temperature T, the ref- erence temperature To, and the reference mobility Ho. The equations required to compute the resistivity are 1 P anu where N+N2 and = To Determine N, given to = 300 K, T = 1000 K, Mo= 1360 cm (V8) 5.q=1.7 x 10-1C, n;=6.21 x 109cm?, and a desired p= 6.5 x 106 V s cm/C. Employ initial guesses of N = 0 and 2.5 x 10'0. Use (a) bisection and (b) the false position method. -2.42 1 n= ()