Ion Implantation: A silicon substrate is doped p-type at 1105 cm. Arsenic is implanted into the...
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Ion Implantation: A silicon substrate is doped p-type at 1105 cm. Arsenic is implanted into the wafer at an energy of 85 KeV, after which Si is epitaxially grown to "bury" the implanted profile. This results in a projected range of 0.5 m and a normal straggle of ~18 nm. Assume a Gaussian profile. a. Calculate the dose required for a peak Arsenic concentration of 110 cm. b. Let's define the profile width, or Wp, as the width of the profile at a concentration of 1105 cm (i.e., concentrations higher than this are contained within Wp, while concentrations lower than this are not). Calculate Wp. Ion Implantation: A silicon substrate is doped p-type at 1105 cm. Arsenic is implanted into the wafer at an energy of 85 KeV, after which Si is epitaxially grown to "bury" the implanted profile. This results in a projected range of 0.5 m and a normal straggle of ~18 nm. Assume a Gaussian profile. a. Calculate the dose required for a peak Arsenic concentration of 110 cm. b. Let's define the profile width, or Wp, as the width of the profile at a concentration of 1105 cm (i.e., concentrations higher than this are contained within Wp, while concentrations lower than this are not). Calculate Wp.
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Fundamentals Of Momentum Heat And Mass Transfer
ISBN: 9781118947463
6th Edition
Authors: James Welty, Gregory L. Rorrer, David G. Foster
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