Question: If a metal with a work function of 5.05 eV is deposited on a n-type semiconductor with a work function of 4.55 eV, and electron

If a metal with a work function of 5.05 eV is deposited on a n-type semiconductor with a work function of 4.55 eV, and electron affinity of the semiconductor is 4.06 eV. Determine and explain briefly whether this junction is a Schottky barrier or an ohmic contact. If this junction is used in a FET, does it have a linear I-V characteristic in both biasing directions

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