Question: P 2 . Consider a CMOS process for which Lmin = 0 . 2 5 m , tox = 6 nm , n = 4
P Consider a CMOS process for which Lmin m toxnm n cmVs and Vt V a Find Cox and kn b For an NMOS transistor with WL m m calculate the values of VOV VGS and VDSmin needed to operate the transistor in the saturation region with a dc current ID mA c For the device in b find the value of VOV and VGS required to cause the device to operate as a resistor for very small vDS
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