Question: Please only solve part c. xx=24 Please I will grant uprate!!! Q1. Consider an extrinsic Silicon doped with Indium atoms at a concentration of N,
Please only solve part c. xx=24

Please I will grant uprate!!!
Q1. Consider an extrinsic Silicon doped with Indium atoms at a concentration of N, -410cm The ionization energy for Indium is given as 0.16eV. Calculate: 40+ xoc 60+ x a) The carrier concentrations no, P, and the Fermi level E,-E, at the temperature of T = *c+60 K N, cm", for var 50 100 (Ex: xx = 00 P = 0.4N, =1.6x100 cm: xx = 99 P. =1.59N, = 6.36x10 cm) c) Using a computer program, plot p. (T) versus temperature over the range Ost 5800 K in linear and logarithmic scale
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