Question: Problem 1 . For a p - type silicon MOS system at room temperature with = 1 0 1 6 cm - 2 , oxide

Problem 1. For a p-type silicon MOS system at room temperature with =1016 cm-2, oxide thickness =12 nm (SiO2), calculate the following:
a) The flatband voltage () if the metal has a workfunction of 4.7 eV.

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