Q$1)$ A MOS capacitor at room temperature has the following given parameters: $\frac{{}_S}{k\frac{T}{q}}=9,\frac{{}_F}{k\frac{T}{q}}=18,$ oxide thickness is $250$ nm $.$ Assume $K_o=3\mathrm{.}9,K_s=11\mathrm{.}7$

$($a$)$ Determine whether this is an n or p $-$type substrate

Calculate:

$($b$)$ the doping concentration

$($c$)$ maximum space charge width

$($d$)$ threshold voltage when ${}_S=2{}_F$