Problem 3 30 minutes. Use the oxidation charts in Jaeger (attached in this HW assignment) to...

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Problem 3 30 minutes. Use the oxidation charts in Jaeger (attached in this HW assignment) to estimate the final oxide thickness in Region A and Region B A bare Si (100) wafer is oxidized for 1 hour at 1100°C in dry 02. It is then photomasked and has the oxide removed over half the wafer. The whole wafer is re-oxidized in steam at 1000°C for SiO2 Si SiO2 Region A SiO2 Region B Si Region A Reference Figure for Problem 2 Region B 1200 °C dry 1200 "C wet 1100 C dry 1100 C wet 1000 C dry 1000 °C wet 900 °C dry 900 "C wet 0.01 0.1 1.0 Wet and dry silicon dioxide growth for (100) silicon 10 Oxidation time (hr) 100 Oxide thickness (urt) Problem 3 30 minutes. Use the oxidation charts in Jaeger (attached in this HW assignment) to estimate the final oxide thickness in Region A and Region B A bare Si (100) wafer is oxidized for 1 hour at 1100°C in dry 02. It is then photomasked and has the oxide removed over half the wafer. The whole wafer is re-oxidized in steam at 1000°C for SiO2 Si SiO2 Region A SiO2 Region B Si Region A Reference Figure for Problem 2 Region B 1200 °C dry 1200 "C wet 1100 C dry 1100 C wet 1000 C dry 1000 °C wet 900 °C dry 900 "C wet 0.01 0.1 1.0 Wet and dry silicon dioxide growth for (100) silicon 10 Oxidation time (hr) 100 Oxide thickness (urt)

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