Question: Problem 5 . 1 Consider an intrinsic GaAs semiconductor with an electron mass of m e * * = 0 . 0 6 7 m
Problem
Consider an intrinsic GaAs semiconductor with an electron mass of a heavyhole mass of and a lighthole mass of ; assume the band gap at is eV Optical pumping creates electrons in the conduction band, leaving an equal number of holes in the valence band. For the questions below, assume
a What is the position of the electron quasiFermi level, relative to the conduction bandedge?
b What is the position of the hole quasiFermi level, relative to the valence bandedge?
c What are the densities of the light and heavyholes?
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