Question: Problem 5 . 4 a ) A silicon P - I - N photodiode has an active light - receiving area of diameter 0 .

Problem 5.4
a) A silicon P-I-N photodiode has an active light-receiving area of diameter 0.4 mm. When light of
wavelength 700 nm and an intensity of 0.1 mW/cm2 is incident on the diode, it generates a
photocurrent of 56.6nA. What is the responsivity and external quantum efficiency of the
photodiode at 700 nm ?
b) An InGaAs avalanche photodiode has a quantum efficiency, , of 60% at 1.55m in the absence
of multiplication (=1). It is biased to operate with a multiplication factor of 12. Calculated the
photocurrent if the incident optical power is 20nW. What is the responsivity when the
multiplication factor is 12?

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