Question 1 (1.0% Assignment Score): A silicon substrate is used to design an electrical resistance (see schematic below). The silicon substrate is p-type with a concentration of charge carriers of 51016 cm3 at room temperature (NB: at room temperature h = 500 cm2/(Vs) and |e| = 1.61019 C). You need to calculate: (a) Electrical resistance if the dimensions of the silicon substrate are X = 100 m, Y = 500 m and Z = 0.1 m (0.25% Final Score). (b) Current density that flows through the p-type silicon upon application of a potential of 5 V (0.25% Final Score). (c) Concentration of dopant that we need to obtain an electrical resistance R = 100 (0.25% Final Score). (d) Width of the contact (X) if we want to flow a current of 1 mA upon 5 V potential (NB: Y and Z are kept constant and the dopant concentration is 51016 cm3) (0.25% Final Score).