Question #$2$

Consider a forward$-$biased abrupt Si p$-$n junction diode under forward bias. On the following graph, sketch and label the total diode current $(1),$ the minority electron current $I_n(x_p)$ in the $p-$side of the junction, the hole majority current $I_p(x_p)$ in the p $-$side of the junction, the minority hole current $I_p(x_n),$ and the majority electron current $I_n(x_n)$ in the n side of the junction as a function of the position measured for the neutral region inside each side.