Question $5.$ Draw the transfer characteristic using the $0\mathrm{.}7$ V diode model. Then, assuming $v_1(t)=2sin(2t)$ V $,$ draw both $v_o(t)$ and $v_i(t).$

Question $6.$ For an NPN BJT at room temperature, with $I_{ES}={10}^{-13}A,=100,V_{CE}=10V,$ and $i_E=10mA,$ determine the values of $V_{BE},V_{BC},i_B,i_C,$ and $.$ Assume that $V_T=26mV$ at room temperature. Use the approximate form of Shockley equation: $i_E=I_{ES}*exp(\frac{V_{BE}}{n*V_T}),$ where $n=1.$

Question $7.$ The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various conditions. Provide the missing entries.

$\backslash$table$[[$Transistor$,$a$,$b$,c,d$