Question: Schottky junction on n - type GaAs. T = 3 0 0 K . Nd = 1 E 1 6 . Barrier height is 0

Schottky junction on n-type GaAs. T=300 K. Nd=1E16. Barrier height is 0.88 V .
(a) Built-in voltage, depletion region width, and Emax at zero bias.
(b) If the barrier lowering is 5\% of the barrier height, determine the reverse voltage.
Schottky junction on n - type GaAs. T = 3 0 0 K .

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