Question: Silicon is doped with Boron ( group III element ) at a concentration of . a . What is the resistivity at 3 0 0

Silicon is doped with Boron (group III element) at a concentration of .
a. What is the resistivity at 300K?
b. Given that the hole drift velocity is 4.7105 cm/2 at a field of 103 V/cm and at T=300K, determine:
i. The hole mobility
ii. The mean free time
iii. The hole diffusion coefficient
The effective hole mass is 0.39.

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