The room temperature electrical conductivity of silicon carbide is 10-4 (Omega-m) - 1. An extrinsic n-type...
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The room temperature electrical conductivity of silicon carbide is 10-4 (Omega-m) - 1. An extrinsic n-type material is desired having a room temperature conductivity of 20 (\Omega -m) - 1. Bismuth is used as electron-receptor impurity. Determine its concentration in atom percentage to yield these electrical characteristics. Assume the electron and hole mobilities are 0.09 and 0.032 m2 /V-s; and the atomic weight and density of silicon carbide are 40.96 amu and 3160 kg/m3, respectively. The room temperature electrical conductivity of silicon carbide is 10-4 (Omega-m) - 1. An extrinsic n-type material is desired having a room temperature conductivity of 20 (\Omega -m) - 1. Bismuth is used as electron-receptor impurity. Determine its concentration in atom percentage to yield these electrical characteristics. Assume the electron and hole mobilities are 0.09 and 0.032 m2 /V-s; and the atomic weight and density of silicon carbide are 40.96 amu and 3160 kg/m3, respectively. The room temperature electrical conductivity of silicon carbide is 10-4 (Omega-m) - 1. An extrinsic n-type material is desired having a room temperature conductivity of 20 (\Omega -m) - 1. Bismuth is used as electron-receptor impurity. Determine its concentration in atom percentage to yield these electrical characteristics. Assume the electron and hole mobilities are 0.09 and 0.032 m2 /V-s; and the atomic weight and density of silicon carbide are 40.96 amu and 3160 kg/m3, respectively. The room temperature electrical conductivity of silicon carbide is 10-4 (Omega-m) - 1. An extrinsic n-type material is desired having a room temperature conductivity of 20 (\Omega -m) - 1. Bismuth is used as electron-receptor impurity. Determine its concentration in atom percentage to yield these electrical characteristics. Assume the electron and hole mobilities are 0.09 and 0.032 m2 /V-s; and the atomic weight and density of silicon carbide are 40.96 amu and 3160 kg/m3, respectively.
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Solution To determine the concentration of bismuth in atom percentage we need to use the following f... View the full answer
Related Book For
Fundamentals of Materials Science and Engineering An Integrated Approach
ISBN: 978-1118061602
4th Edition
Authors: David G. Rethwisch
Posted Date:
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