Question: this problem concerns a junction with a heavily doped n-type region a thin intrinsic layer and a moderately doped p type region as sketched below
this problem concerns a junction with a heavily doped n-type region a thin intrinsic layer and a moderately doped p type region as sketched below assume the depletion approximation and assume that the width of the depletion region on the p-side s significantly greater than the thickness of the intrinsic layer
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